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Compound Semiconductor Materials and Devices on Si

Guest Editors:

Huiyun Liu

Yikai Su

Chuanbo Li

Xuhan Guo

Preface to the Special Topic on Compound Semiconductor Materials and Devices on Si

Huiyun Liu, Yikai Su, Chuanbo Li, Xuhan Guo

2019, 40(10): 100101, doi: 10.1088/1674-4926/40/10/100101
Progress in integrating III–V semiconductors on silicon could drive silicon photonics forward

Xinlun Cai

2019, 40(10): 100301, doi: 10.1088/1674-4926/40/10/100301
III–V ternary nanowires on Si substrates: growth, characterization and device applications

Giorgos Boras, Xuezhe Yu, Huiyun Liu

2019, 40(10): 101301, doi: 10.1088/1674-4926/40/10/101301
Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

Shujie Pan, Victoria Cao, Mengya Liao, Ying Lu, Zizhuo Liu, Mingchu Tang, Siming Chen, Alwyn Seeds, Huiyun Liu

2019, 40(10): 101302, doi: 10.1088/1674-4926/40/10/101302
Perspective: optically-pumped III–V quantum dot microcavity lasers via CMOS compatible patterned Si (001) substrates

Wenqi Wei, Qi Feng, Zihao Wang, Ting Wang, Jianjun Zhang

2019, 40(10): 101303, doi: 10.1088/1674-4926/40/10/101303
Recent advances of heterogeneously integrated III–V laser on Si

Xuhan Guo, An He, Yikai Su

2019, 40(10): 101304, doi: 10.1088/1674-4926/40/10/101304
III–V compound materials and lasers on silicon

Wenyu Yang, Yajie Li, Fangyuan Meng, Hongyan Yu, Mengqi Wang, Pengfei Wang, Guangzhen Luo, Xuliang Zhou, Jiaoqing Pan

2019, 40(10): 101305, doi: 10.1088/1674-4926/40/10/101305
Dynamics of InAs/GaAs quantum dot lasers epitaxially grown on Ge or Si substrate

Cheng Wang, Yueguang Zhou

2019, 40(10): 101306, doi: 10.1088/1674-4926/40/10/101306

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All Special Issues

Special Issue on Advanced Optoelectronic and Electronic Devices toward Future Displays
—Celebration of the 10th anniversary of the State Key Laboratory of Advanced Displays and Optoelectronics Technologies at HKUST

Special Issue on Towards High Performance Ga₂O₃ Electronics: Power Devices and DUV Optoelectronic Devices (Ⅱ)

Special Issue on Towards High Performance Ga₂O₃ Electronics: Epitaxial Growth and Power Devices (Ⅰ)

Novel Semiconductor-biochemical Sensors

Twisted van der Waals Heterostructures

In-Situ and in-operando Characterization of Semiconductor Materials and Devices

Flexible Energy Devices

Semiconductor Optoelectronic Integrated Circuits

Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration

Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing

Advanced Analog and Mixed-Mode Integrated Circuits

Challenges and Possibilities of Energy Storage

Monoelemental 2D Semiconducting Materials and Their Applications

Quantum Transport in Mesoscopic Systems

Perovskite Semiconductor Optoelectronic Materials and Devices

Flexible Materials and Structures for Bioengineering, Sensing, and Energy Applications

Reconfigurable Computing for Energy Efficient AI Microchip Technologies

Celebration of the 60^th Anniversary of Dedicating to Scientific Research of Prof. Zhanguo Wang

Ultra-Violet Optoelectronic Materials, Devices and Applications

Flexible and Wearable Sensors for Robotics and Health

Compound Semiconductor Materials and Devices on Si

A Celebration of the 100^th Birthday of Prof. Kun Huang

Challenges and Possibilities of Magnetic Semiconductors

Quantum Light Sources from Semiconductors

2D-materials-related physical properties and optoelectronic devices

Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

Semiconductor Materials Genome Initiative: New Concepts and Discoveries

Si-Based Materials and Devices

Flexible and Wearable Electronics: from Materials to Applications

Devices and Circuits for Wearable and IoT Systems

2D Materials and Devices

Perovskite Solar Cells

Journal of Semiconductors © 2017 All Rights Reserved 京ICP備05085259號-2

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