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Monoelemental 2D Semiconducting Materials and Their Applications

Guest Editors:

Han Zhang

Xiantao Jiang

Yeliang Wang

Krassimir Panajotov

Shengli Zhang

Preface to the Special Issue on Monoelemental 2D Semiconducting Materials and Their Applications

Han Zhang, Xiantao Jiang, Yeliang Wang, Krassimir Panajotov, Shengli Zhang

2020, 41(8): 080101, doi: 10.1088/1674-4926/41/8/080101
Photodetectors based on 2D material/Si heterostructure

Jingshu Zhou, Juehan Yang, Zhongming Wei

2020, 41(8): 080401, doi: 10.1088/1674-4926/41/8/080401
A new single-element layered two-dimensional semiconductor: black arsenic

Mianzeng Zhong, Jun He

2020, 41(8): 080402, doi: 10.1088/1674-4926/41/8/080402
Physical vapor deposited 2D bismuth for CMOS technology

Hanliu Zhao, Xinghao Sun, Zhengrui Zhu, Wen Zhong, Dongdong Song, Weibing Lu, Li Tao

2020, 41(8): 081001, doi: 10.1088/1674-4926/41/8/081001
Tellurene: An elemental 2D monolayer material beyond its bulk phases without van der Waals layered structures

Xiaolin Cai, Xiaoyu Han, Chunxiang Zhao, Chunyao Niu, Yu Jia

2020, 41(8): 081002, doi: 10.1088/1674-4926/41/8/081002
Recent progress in 2D group-V elemental monolayers: fabrications and properties

Peiwen Yuan, Teng Zhang, Jiatao Sun, Liwei Liu, Yugui Yao, Yeliang Wang

2020, 41(8): 081003, doi: 10.1088/1674-4926/41/8/081003
Controlled growth of Mo₂C pyramids on liquid Cu surface

Yixuan Fan, Le Huang, Dechao Geng, Wenping Hu

2020, 41(8): 082001, doi: 10.1088/1674-4926/41/8/082001
High-performance junction field-effect transistor based on black phosphorus/β-Ga₂O₃ heterostructure

Chang Li, Cheng Chen, Jie Chen, Tao He, Hongwei Li, Zeyuan Yang, Liu Xie, Zhongchang Wang, Kai Zhang

2020, 41(8): 082002, doi: 10.1088/1674-4926/41/8/082002
On the mystery of the absence of a spin-orbit gap in scanning tunneling microscopy spectra of germanene

Carolien Castenmiller, Harold J. W. Zandvliet

2020, 41(8): 082003, doi: 10.1088/1674-4926/41/8/082003
Photo-induced doping effect and dynamic process in monolayer MoSe₂

Qian Yang, Yongzhou Xue, Hao Chen, Xiuming Dou, Baoquan Sun

2020, 41(8): 082004, doi: 10.1088/1674-4926/41/8/082004
Strain tunable band structure of a new 2D carbon allotrope C₅₆₈

Qiang Gao, Hasan Sahin, Jun Kang

2020, 41(8): 082005, doi: 10.1088/1674-4926/41/8/082005
First-principle study of puckered arsenene MOSFET

Hengze Qu, Ziwei Lin, Ruijuan Guo, Xiyu Ming, Wenhan Zhou, Shiying Guo, Xiufeng Song, Shengli Zhang, Haibo Zeng

2020, 41(8): 082006, doi: 10.1088/1674-4926/41/8/082006

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